Unit of Measure

Specifications

Available

Manufacturer Stock

Brands

VISHAY®

Manufacturer

VISHAY�

Industry Standards

Restriction of Hazardous Substances (RoHS) Compliant

Absolute Maximum Ratings (TC = 25 Degree Celsius (ºC), Unless Otherwise Noted)

Drain-Source Voltage (VDS)

500 V

Gate-Source Voltage Tolerance (±) (VGS)

30 V

Continuous Drain Current (ID) at TC = 25 Degree Celsius (ºC) Temperature

14 A

Continuous Drain Current (ID) at TC = 100 Degree Celsius (ºC) Temperature

8.7 A
Pulsed Drain Current (IDM)1 56 A

Linear Derating Factor

1.5 W/ºC
Single Pulse Avalanche Energy (EAS)2 760 MJ
Repetitive Avalanche Current (IAR)3 14 A
Repetitive Avalanche Energy (EAR)4 19 MJ

Maximum Power Dissipation (PD) at TC = 25 Degree Celsius (ºC) Temperature

190 W
Peak Diode Recovery (dV/dt)5 4.1 V/ns

Operational Junction and Storage Temperature Range (Tj = Tstg)

-55 to 150 ºC
Soldering Recommendations (Peak Temperature)6 300 ºC

Mounting Torque

10 ibf·in1.1 N·m

Thermal Resistance Ratings

Maximum Thermal Resistance Junction to Ambient (RthJA)

40 ºC/W

Typical Thermal Resistance Case to Sink, Flat, and Greased Surface (RthCS)

0.24 ºC/W

Maximum Thermal Resistance (Junction to Case (Drain)) (RthJC)

0.65 ºC/W

Features

Features

  • Low Gate Charge Qg Results in Simple Drive Requirement
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche Voltage and Current
  • Effective Coss Specified

Applications

Applications

  • Switch Mode Power Supply (SMPS)
  • Uninterruptable Power Supply
  • High Speed Power Switching

Typical Switched Mode Power Supply (SMPS) Topologies

Typical Switched Mode Power Supply (SMPS) Topologies

  • Two Transistor Forward
  • Half Bridge, Full Bridge
  • PFC Boost

Note

Note

Lead-Free
  • 1 Repetitive rating; pulse width limited by maximum junction temperature
  • 2 Starting TJ = 25 ºC, L = 7.8 mH, RG = 25 ?, IAS = 14 A
  • 3 Repetitive rating; pulse width limited by maximum junction temperature
  • 4 Repetitive rating; pulse width limited by maximum junction temperature
  • 5 ISD ≤ 14 A, dI/dt ≤ 130 A/µs, VDD ≤ VDS/, TJ ≤ 150 ºC
  • 6 For 10 s
    1.6 mm from case